Publishing

2024

A comparative study on full-energy peak efficiency calibration methods for HPGe detector: Virtual point detector, curve fitting, and machine learning models

HD Chuong, NHD Khang, NTT Linh, TT Sang, NT Dat, HD Tam

NIMA 1058, 168941(2024)

https://doi.org/10.1016/j.nima.2023.168941

High-efficient spin orbit torque generated by topological semimetal YPtBi deposited on oxidized Si substrates

T Shirokura, NHD Khang, PN Hai

Appl. Phys. Lett. 124, 052402 (2024) https://doi.org/10.1038/s41598-022-06779-3

Comparison of conventional linear regression method and interpretable artificial neural network for copper determination using optical emission spectroscopy of solution cathode glow discharge

HB Khanh, NL Duy, NA Tien, NHD Khang

Spectrochimica Acta Part B: Atomic Spectroscopy 219, 107000 (2024)

https://doi.org/10.1016/j.sab.2024.107000

2023

Room-temperature spin injection from a ferromagnetic semiconductor

S.Goel, N.H.D.Khang, Y.Osada, L.D.Anh, P.N.Hai, M.Tanaka

Sci Rep 13, 2181 (2023). https://doi.org/10.1038/s41598-023-29169-9

Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology

H. H. Huy, J. Sasaki, N.H.D.Khang, S.Namba, P.N.Hai, Q.Le, B.York, C.Hwang, X.Liu, M.Gribelyuk, X.Xu, S.Le, M.Ho, H.Takano

Appl. Phys. Lett. 122, 052401 (2023).

https://doi.org/10.1063/5.0135831

2022

Nanosecond ultralow power spin orbit torque magnetization switching driven by BiSb topological insulator

Nguyen Huynh Duy Khang, Takanori Shirokura, Tuo Fan, Mao Takahashi, Naoki Nakatani, Daisuke Kato, Yasuyoshi Miyamoto, Pham Nam Hai

Appl. Phys. Lett. 120, 152401 (2022).

https://doi.org/10.1063/5.0084927

Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers

T Fan, NHD Khang, S Nakano, PN Hai

Sci Rep 12, 2998 (2022). https://doi.org/10.1038/s41598-022-06779-3

Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility

Takanori Shirokura, Tuo Fan, Nguyen Huynh Duy Khang, Tsuyoshi Kondo, Pham Nam Hai

Sci Rep 12, 2426 (2022). https://doi.org/10.1038/s41598-022-06325-1

Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy

M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, and P. N. Hai

Phys. Rev. Materials 6, 074403 – Published 15 July 2022; https://doi.org/10.1103/PhysRevMaterials.6.074403

High Spin Hall Angle doped BiSbX Topological Insulators using novel high resistive growth and migration barrier layers

B York, P Hai, Q Le, C Hwang, S Okamura, M Gribelyuk, X Xu, K Nguyen, H Ho, J Sasaki, X Liu, S Le, M Ho, H Takano, R Simmons

IEEE Transactions on Magnetics (2022)

10.1109/TMRC56419.2022.9918584

Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application

HH Huy, J Sasaki, NHD Khang, S Namba, PN Hai, Q Le, B York, C Hwang, X Liu, M Gribelyuk, X Xu, S Le, R Nagabhirava, M Ho, H Takano

IEEE Transactions on Magnetics (2022) 10.1109/TMAG.2022.3215481

Before 2022

Plese reference here for details

Patents

SOT reader using BiSb topological insulator

Pham Nam Hai, Ho Hoang Huy, Julian Sasaki, Nguyen Huynh Duy Khang

US Patent App. WDA-5879-US (21T110US) 17/705,147

Using MgO as the interlayer for Ferromagnet/BiSb stack

Mao Takahashi, Naoki Nakatani, Daisuke Kato, Yasuyoshi Miyamoto, Pham Nam Hai, Nguyen Huynh Duy Khang, Takanori Shirokura

Japanese and PCT patent applications, filed on December September 2021

Two terminal magnetoresistive randrom access memory using magnon absorption/ emission and spin disorder scattering for readout

Pham Nam Hai, Nguyen Huynh Duy Khang, Takanori Shirokura.

Japanese and PCT patent applications, No. 2019-0035, filed on 15th September 2019.

Method to fabricate ferromagnets/BiSb heterostructures and magnetoresistive memory

Pham Nam Hai, Nguyen Huynh Duy Khang.

Japanese and PCT patent applications, No. 2017-177564, filed on 15th September 2017.

3 dimensional magnetic nanowire memory

Pham Nam Hai, Takanori Shirokura, Nguyen Huynh Duy Khang
Japanese and PCT patent applications, No. 2022-0177, filed on 17th February 2023.

SOT reader using BiSb topological insulator

Quang Le, Brian R York, Xiaoyong Liu, Cherngye Hwang, Michael A Gribelyuk, Xiaoyu Xu, Kuok San Ho, Hisashi Takano, Julian SASAKI, Khang HD NGUYEN, Nam Hai PHAM
US Patent 11,875,827